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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION *With TO-3PFa package *Complement to type 2SC2987/2987A *High power dissipation APPLICATIONS *For use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA1227 VCBO Collector-base voltage 2SA1227A 2SA1227 VCEO Collector-emitter voltage 2SA1227A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -5 -12 -20 120 150 -55~150 V A A W Open emitter -160 -140 V CONDITIONS VALUE -140 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1227 2SA1227A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -0.8 -1.5 V VBEsat ICBO Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -1.5 -2.0 V A A Collector cut-off current VCB=-140V; IE=0 -50 IEBO Emitter cut-off current VEB=-3V; IC=0 -50 hFE-1 DC current gain IC=-2A ; VCE=-5V 60 320 hFE -2 DC current gain IC=-5A ; VCE=-5V 40 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 280 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1227 2SA1227A Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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